AO4800B, AO4800BL
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800B/L uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
Standard Product AO4800B/L is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D1
D2
SOIC-8
G2
S1
S2
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Power Dissipation
B
Avalanche Current
B
Maximum
30
±12
6.9
5.8
40
1.9
1.2
12
22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
B
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
55
90
40
Max
62.5
110
48
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
