AO4806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4806 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 12V. It is ESD protected. This device is suitable for
use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS &
Sony 259 specifications). AO4806L is a Green
Product ordering option. AO4806 and AO4806L are
electrically identical.
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
Features
V
DS
(V) = 20V
I
D
= 9.4A (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 15mΩ (V
GS
= 4.5V)
R
DS(ON)
< 21mΩ (V
GS
= 2.5V)
R
DS(ON)
< 30mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
20
±12
9.4
7.5
40
2
1.28
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
45
72
34
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
