AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4807 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
Features
V
DS
(V) = -30V
I
D
= -6 A (V
GS
= -10V)
R
DS(ON)
< 35mΩ (V
GS
= -10V)
R
DS(ON)
< 58mΩ (V
GS
= -4.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
