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AO4821 参数 Datasheet PDF下载

AO4821图片预览
型号: AO4821
PDF下载: 下载PDF文件 查看货源
内容描述: 双P沟道增强型场效应晶体管 [Dual P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 115 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4821
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4821 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO4821 is Pb-free (meets ROHS & Sony 259
specifications). AO4821L is a Green Product ordering
option. AO4821 and AO4821L are electrically
Features
V
DS
(V) = -12V
I
D
= -8 A (V
GS
= -4.5V)
R
DS(ON)
< 18mΩ (V
GS
= -4.5V)
R
DS(ON)
< 22mΩ (V
GS
= -2.5V)
R
DS(ON)
< 29mΩ (V
GS
= -1.8V)
ESD Rating: 4KV HBM
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-12
±8
-8
-6.7
-20
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.