AO4836
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4836 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters. It is ESD protected.
AO4836 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4836L is a Green Product ordering option.
AO4836 and AO4836L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 7.2A
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 40mΩ (V
GS
= 4.5V)
ESD rating: 1500V (HBM)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
Maximum
30
±20
7.2
6.1
30
2
1.44
-55 to 150
Units
V
V
A
I
DM
P
D
T
J
, T
STG
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
55
92
37
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
