AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4840 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
Features
V
DS
(V) = 40V
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 31mΩ (V
GS
=10V)
R
DS(ON)
< 45mΩ (V
GS
=4.5V)
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
G1
S2
D1
SOIC-8
S1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
T
A
=25°C
T
A
=70°C
B
Max
40
±20
6
5
20
2
1.28
-55 to 150
Units
V
V
A
V
GS
I
D
I
DM
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
W
°C
Symbol
A
A
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
