AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.
Standard Product AO4900A is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
AO4900A and AO4900AL are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D2
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
G2
S2
K
D1
SOIC-8
A
G1
S1
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
30
±12
6.9
5.8
40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
2
1.44
-55 to 150
Typ
55
90
40
47.5
71
32
30
3
2
40
2
1.44
-55 to 150
Max
62.5
110
48
62.5
110
40
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
