AO4902
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4902 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two identical
MOSFETs are co-packaged in parallel with a Schottky
diode, making them ideal for many bridge and totem pole
applications, for e.g. DDR memory.
Standard Product
AO4902 is Pb-free (meets ROHS & Sony 259
specifications). AO4902L is a Green Product ordering
option. AO4902 and AO4902L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 6.9A (V
GS
= 10V)
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
D1
D2
K1
K2
S2/A2
G2
S1/A1
G1
1
2
3
4
8
7
6
5
D2/K2
D2/K2
D1/K1
D1/K1
G1
S1
A1
G2
S2
A2
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
30
±12
6.9
5.8
40
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
C
T
A
=70°C
I
F
I
FM
30
3
2
2
1.44
-55 to 150
Typ
48
74
35
47.5
71
32
40
2
1.44
-55 to 150
Max
62.5
110
40
62.5
110
40
V
A
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
