Rev 6: May 2005
AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4914 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
AO4914 is Pb-free (meets ROHS & Sony 259
specifications). AO4914L is a Green Product ordering
option. AO4914 and AO4914L are electrically identical.
Features
Q1
V
DS
(V) = 30V
I
D
= 8.5A
R
DS(ON)
< 18mΩ
R
DS(ON)
< 28mΩ
Q2
V
DS
(V) = 30V
I
D
= 8.5A
<18mΩ
(V
GS
= 10V)
<28mΩ
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
Q1
D2
K
D1
Q2
SOIC-8
G2
S2
A
G1
S1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
B
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
V
DS
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
A
Current
T
A
=25°C
T
A
=70°C
B
W
°C
Units
V
A
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
I
F
I
FM
P
D
T
J
, T
STG
Pulsed Diode Forward Current
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
W
°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
