AO4918
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4918 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4918 is Pb-free (meets ROHS &
Sony 259 specifications). AO4918L is a Green Product
ordering option. AO4918 and AO4918L are electrically
identical.
Features
Q1
Q2
V
DS
(V) = 30V
V
DS
(V) = 30V
I
D
= 9.3A (V
GS
= 10V) I
D
=8.3A (V
GS
= 10V
R
DS(ON)
< 14.5mΩ
<18mΩ
(V
GS
= 10V)
<27mΩ
(V
GS
= 4.5V)
R
DS(ON)
< 16mΩ
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
D2
Q1
G1
S1
A
Q2
G2
S2
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
I
D
T
A
=70°C
Pulsed Drain Current
B
Max Q1
30
±12
9.3
7.4
40
2
1.28
-55 to 150
Max Q2
30
±20
8.3
6.7
40
2
1.28
-55 to 150
Units
V
V
A
I
DM
T
A
=25°C
P
D
T
J
, T
STG
Symbol
V
DS
T
A
=25°C
T
A
=70°C
B
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
A
Current
W
°C
Units
V
A
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
I
F
I
FM
P
D
T
J
, T
STG
Pulsed Diode Forward Current
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
W
°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
