AO4916A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4916A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4916A is Pb-free (meets ROHS &
Sony 259 specifications). AO4916AL is a Green Product
ordering option. AO4916A and AO4916AL are
electrically identical.
Features
Q1
Q2
V
DS
(V) = 30V
V
DS
(V) = 30V
I
D
= 8.5A
(
V
GS
= 10V)
I
D
= 8.5A
(
V
GS
= 10V)
R
DS(ON)
< 17mΩ
<17mΩ
(V
GS
= 10V)
R
DS(ON)
< 27mΩ
<27mΩ
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
Q1
D1
K
D2
Q2
SOIC8
G1
S1
A
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
B
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
I
D
I
DM
P
D
T
J
, T
STG
Symbol
V
DS
T
A
=25°C
T
A
=70°C
B
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
A
Current
W
°C
Units
V
A
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
I
F
I
FM
P
D
T
J
, T
STG
Pulsed Diode Forward Current
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
W
°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
