AO4918A
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4918A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.
AO4918A is Pb-free (meets ROHS
& Sony 259 specifications). AO4918AL is a Green
Product ordering option. AO4918A and AO4918AL
are electrically identical.
Features
Q1
V
DS
(V) = 30V
I
D
= 9.3A
R
DS(ON)
< 14.5mΩ
R
DS(ON)
< 16mΩ
Q2
V
DS
(V) = 30V
I
D
=8.5A
<18mΩ
(V
GS
= 10V)
<27mΩ
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
D2
Q1
G1
S1
A
Q2
G2
S2
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
T
A
=70°C
I
D
Pulsed Drain Current
B
Max Q1
30
±12
9.3
7.4
40
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.7
30
2
1.28
-55 to 150
Units
V
V
A
I
DM
T
A
=25°C
P
D
T
J
, T
STG
Symbol
V
DS
T
A
=25°C
T
A
=70°C
B
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward
Current
A
W
°C
Units
V
A
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
I
F
I
FM
P
D
T
J
, T
STG
Pulsed Diode Forward Current
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
W
°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
