SRFET
AO4932
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
The AO4932 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
FET1
V
DS
(V) = 30V
I
D
= 9A
R
DS(ON)
< 15.8mΩ
R
DS(ON)
< 19.6mΩ
FET2
V
DS
(V) = 30V
I
D
=9A
(V
GS
= 10V)
<15.8mΩ
(V
GS
= 10V)
<23mΩ
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Max FET1
Parameter
V
DS
30
Drain-Source Voltage
V
GS
Gate-Source Voltage
±12
Continuous Drain
Current
AF
Pulsed Drain Current
B
Avalanche Current
C
C
Max FET2
30
±20
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
DSM
I
DM
I
AR
E
AR
P
DSM
T
J
, T
STG
T
A
=25°C
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics FET1
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
C
Maximum Junction-to-Lead
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
