AO5800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SC89-6L footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
Standard Product AO5800 is Pb-
free (meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 60V
I
D
= 0.4A (V
GS
= 10V)
R
DS(ON)
< 1.6Ω (V
GS
= 10V)
R
DS(ON)
< 1.9Ω (V
GS
= 4.5V)
SC-89-6
D1
D2
G2
S2
D1
G1
G2
S1
D2
G1
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A, F
Pulsed Drain Current
Power Dissipation
A
B
Maximum
60
±20
0.4
0.3
1.6
0.4
0.24
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
275
360
300
Max
330
450
350
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
