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AO6401L 参数 Datasheet PDF下载

AO6401L图片预览
型号: AO6401L
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 111 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO6401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO6401 is Pb-free
(meets ROHS & Sony 259 specifications). AO6401L
is a Green Product ordering option. AO6401 and
AO6401L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 49mΩ (V
GS
= -10V)
R
DS(ON)
< 64mΩ (V
GS
= -4.5V)
R
DS(ON)
< 119mΩ (V
GS
= -2.5V)
D
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-5
-4.2
-30
2
1.44
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.