AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
12
14
16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1200
V
DS
=-15V
I
D
=-5A
Capacitance (pF)
1000
800
600
400
C
oss
200
0
0
C
rss
5
10
15
20
25
30
C
iss
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
0.1s
40
10µs
100µs
1ms
10ms
Power (W)
30
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10
20
1
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
