AO6414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6414 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product
AO6414 is Pb-free (meets
ROHS & Sony 259 specifications). AO6414L is a
Green Product ordering option. AO6414 and
AO6414L are electrically identical.
Features
V
DS
(V) = 55V
I
D
= 2.4A (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 4.5V)
R
DS(ON)
< 200mΩ (V
GS
= 2.5V)
TSOP-6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
T
A
=70°C
I
D
Pulsed Drain Current
B
Maximum
55
±12
2.3
1.9
9
1.56
1.1
-55 to 150
Units
V
V
A
I
DM
P
D
T
J
, T
STG
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
58
94
37
Max
80
120
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
