AO6415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6415 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO6415 is Pb-free (meets ROHS & Sony
259 specifications). AO6415L is a Green Product ordering
option. AO6415 and AO6415L are electrically identical.
Features
V
DS
(V) = -20V
I
D
= -3.3A (V
GS
= -10V)
R
DS(ON)
< 75mΩ (V
GS
= -10V)
R
DS(ON)
< 100mΩ (V
GS
= -4.5V)
R
DS(ON)
< 150mΩ (V
GS
= -2.5V)
ESD Rating: 2000V HBM
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±12
-3.3
-2.7
-14
1.25
0.8
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
82
111
56
Max
100
140
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
