AO6422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6422/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for general purpose application.
AO6422 and AO6422L are electrically identical.
-RoHS Compliant
-AO6422L is Halogen Free
Features
V
DS
= 20V
I
D
= 5A
(V
GS
= 4.5V)
R
DS(ON)
< 44mΩ (V
GS
= 4.5V)
R
DS(ON)
< 55mΩ (V
GS
= 2.5V)
R
DS(ON)
< 72mΩ (V
GS
= 1.8V)
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
10 Sec
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
5
4.2
Steady State
20
±8
3.9
3
30
1.1
0.7
Units
V
V
A
2.0
1.3
-55 to 150
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
47.5
74
54
Max
62.5
110
68
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
