AO6605
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6605 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6605 is Pb-free (meets ROHS &
Sony 259 specifications). AO6605L is a Green
Product ordering option. AO6605 and AO6605L are
electrically identical.
Features
n-channel
p-channel
-20V
V
DS
(V) = 20V
I
D
= 1.9A (V
GS
= 4.5V) -2.5A
R
DS(ON)
< 200mΩ
< 97mΩ (V
GS
= 4.5V)
< 270mΩ
< 130mΩ (V
GS
= 2.5V)
< 400mΩ
< 190mΩ (V
GS
= 1.8V)
D1
TSOP6
Top View
G1
S2
G2
1 6
2 5
3 4
D1
S1
D2
G1
S1
G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±8
1.7
1.4
15
1.15
0.73
-55 to 150
Max p-channel
-20
±8
-2.5
-2.0
-15
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
