AO6601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6601 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6601 is Pb-free (meets ROHS &
Sony 259 specifications). AO6601L is a Green
Product ordering option. AO6601 and AO6601L are
electrically identical.
Features
n-channel
p-channel
-30V
V
DS
(V) = 30V
I
D
= 3.4A
(V
GS
= 10V)
-2.3A
(V
GS
= -10V)
R
DS(ON)
< 60mΩ
(V
GS
= 10V)
< 135mΩ
(V
GS
= -10V)
< 75mΩ
(V
GS
= 4.5V)
< 185mΩ
(V
GS
= -4.5V)
< 115mΩ
(V
GS
= 2.5V)
< 265mΩ
(V
GS
= -2.5V)
D1
TSOP6
Top View
G1
S2
G2
1 6
2 5
3 4
D1
S1
D2
G1
S1
G2
D2
S2
n-channel
p-channel
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
V
DS
Drain-Source Voltage
30
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
±12
3.4
2.7
30
1.15
0.73
-55 to 150
Max p-channel
-30
±12
-2.3
-1.8
-30
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
