AO6701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6701 is Pb-free (meets ROHS & Sony
259 specifications). AO6701L is a Green Product ordering
option. AO6701 and AO6701L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -2.3A (V
GS
= -10V)
R
DS(ON)
< 135mΩ (V
GS
= -10V)
R
DS(ON)
< 185mΩ (V
GS
= -4.5V)
R
DS(ON)
< 265mΩ (V
GS
= -2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
D
A
S
G
K
N/C
D
K
1 6
2 5
3 4
G
S
A
TSOP6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
Schottky reverse voltage
T
A
=25°C
Continuous Forward Current
A
Pulsed Forward Current
B
T
A
=25°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead
C
T
A
=70°C
T
A
=70°C
A
MOSFET
-30
±12
-2.3
-1.8
-15
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
20
2
1
1.15
0.7
-55 to 150
Typ
78
106
64
109.4
136.5
58.5
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
V
A
W
°C
Units
°C/W
°C/W