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AO6700 参数 Datasheet PDF下载

AO6700图片预览
型号: AO6700
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型场效应晶体管,肖特基二极管 [N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode]
分类和应用: 晶体肖特基二极管晶体管场效应晶体管
文件页数/大小: 4 页 / 110 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO6700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6700 is Pb-free (meets ROHS & Sony
259 specifications). AO6700L is a Green Product ordering
option. AO6700 and AO6700L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 4.1A (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 4.5V)
R
DS(ON)
< 65mΩ (V
GS
= 2.5V)
R
DS(ON)
< 95mΩ (V
GS
= 1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
D
TSOP6
Top View
K
S
G
A
D
D
K
1 6
2 5
3 4
G
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
20
±8
4.1
3.3
10
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
1.39
0.89
-55 to 150
Typ
70
102
51
129
158
52
20
1.5
1
10
0.78
0.5
-55 to 150
Max
90
130
80
160
200
80
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
10s
Steady-State
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
°C/W