AO6706
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6706 is Pb-free (meets ROHS & Sony
259 specifications). AO6706L is a Green Product ordering
option. AO6706 and AO6706L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 3.6A (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
D
TSOP6
Top View
A
S
G
1 6
2 5
3 4
K
N/C
D
K
G
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
30
±12
3.3
2.6
10
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
1.15
0.7
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
