AO6804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6804 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This device
is suitable for use as a load switch or in PWM
applications.
AO6804 is Pb-free (meets ROHS & Sony
259 specifications).
Features
V
DS
= 20V
I
D
= 5.0A
(V
GS
= 4.5V)
Typical Rds
R
DS(ON)
< 24mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 4.0V)
R
DS(ON)
< 28mΩ (V
GS
= 3.1V)
R
DS(ON)
< 31mΩ (V
GS
= 2.5V)
D1
TSOP6
Top View
S1
D1/D2
S2
1 6
2 5
3 4
G1
D1/D2
G2
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
10 Sec
Steady State
Parameter
V
DS
Drain-Source Voltage
20
V
GS
±12
Gate-Source Voltage
Continuous Drain
5
4
T
A
=25°C
A
Current
T
A
=70°C
4
3.2
I
D
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
I
DM
P
D
T
J
, T
STG
1.3
0.8
-55 to 150
25
0.8
0.5
Units
V
V
A
W
°C
Symbol
A
A
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
76
118
54
Max
95
150
68
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
