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AO7401 参数 Datasheet PDF下载

AO7401图片预览
型号: AO7401
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 6 页 / 229 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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Nov 2002
AO7401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7401 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Features
V
DS
(V) = -30V
I
D
= -1.2A
R
DS(ON)
< 150mΩ (V
GS
= -10V)
R
DS(ON)
< 200mΩ (V
GS
= -4.5V)
R
DS(ON)
< 280mΩ (V
GS
= -2.5V)
SC-70
(SOT-323)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±12
-1.2
-1.0
-10
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
350
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.