AO7408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7408 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7408 is Pb-free (meets ROHS
& Sony 259 specifications). AO7408L is a Green
Product ordering option. AO7408 and AO7408L are
electrically identical.
Features
V
DS
(V) = 20V
I
D
= 2.2 A (V
GS
= 4.5V)
R
DS(ON)
< 82mΩ (V
GS
= 4.5V)
R
DS(ON)
< 95mΩ (V
GS
= 2.5V)
R
DS(ON)
< 120mΩ (V
GS
= 1.8V)
SC-70-6
(SOT-323)
Top View
D
D
G
D
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
2.2
1.75
10
0.625
0.4
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
160
180
130
Max
200
220
160
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
