AO7402
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7402 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT323 footprint. It can
be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
Standard Product AO7402 is Pb-free (meets ROHS
& Sony 259 specifications). AO7402L is a Green Product
ordering option. AO7402 and AO7402L are electrically
identical.
SC-70
(SOT-323)
Top View
G
D
S
G
S
Features
V
DS
(V) = 20V
I
D
= 1.6 A (V
GS
= 4.5V)
R
DS(ON)
< 90mΩ (V
GS
= 4.5V)
R
DS(ON)
< 105mΩ (V
GS
= 2.5V)
R
DS(ON)
< 130mΩ (V
GS
= 1.8V)
D
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
1.6
1.2
10
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.