AO7412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7412 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7412 is Pb-free (meets ROHS
& Sony 259 specifications). AO7412L is a Green
Product ordering option. AO7412 and AO7412L are
electrically identical.
Features
V
DS
(V) = 30V
I
D
= 2.1 A (V
GS
= 10V)
R
DS(ON)
< 90mΩ (V
GS
= 10V)
R
DS(ON)
< 100mΩ (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 2.5V)
SC-70-6
(SOT-323)
Top View
D
D
G
D
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
Power Dissipation
A
B
Maximum
30
±12
2.1
1.7
10
0.625
0.4
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
175
200
130
Max
200
250
160
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
