AO7415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7415 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT363 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM.
Standard product
AO7415 is Pb-free (meets ROHS & Sony 259
specifications). AO7415L is a Green Product
ordering option. AO7415 and AO7415L are
electrically identical.
Features
V
DS
(V) = -20V
I
D
= -2A (V
GS
= -10V)
R
DS(ON)
< 100mΩ (V
GS
= -10V)
R
DS(ON)
< 125mΩ (V
GS
= -4.5V)
R
DS(ON)
< 170mΩ (V
GS
= -2.5V)
SC-70-6
(SOT-363)
Top View
D
D
G
D
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
-20
±12
-2
-1.6
-8
0.625
0.4
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
T
A
=70°C
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
160
180
130
Max
200
220
160
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
