AO7414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7414 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT-323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
AO7414 and AO7414L are electrically identical.
-RoHS Compliant
-AO7414L is Halogen Free
Features
V
DS
(V) = 20V
I
D
= 2 A (V
GS
= 4.5V)
R
DS(ON)
< 62mΩ (V
GS
= 4.5V)
R
DS(ON)
< 70mΩ (V
GS
= 2.5V)
R
DS(ON)
< 85mΩ (V
GS
= 1.8V)
SC-70
(SOT-323)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
2
1.5
25
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
