AO7417
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7417/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.5V, in the
small SOT363 footprint. This device is suitable for
use in buck convertor.
AO7417 and AO7417L are electrically identical.
-RoHS Compliant
-AO7417L is Halogen Free
Features
V
DS
(V) = -20V
(V
GS
= -4.5V)
I
D
= -2 A
R
DS(ON)
< 80mΩ
(V
GS
= -4.5V)
R
DS(ON)
< 100mΩ (V
GS
= -2.5V)
R
DS(ON)
< 125mΩ (V
GS
= -1.8V)
R
DS(ON)
< 150mΩ (V
GS
= -1.5V)
SC-70-6
(SOT-363)
Top View
D
D
G
1 6
2 5
3 4
D
D
S
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
10 Sec
-20
±8
-2
Steady State
Units
V
V
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
-1.9
-1.6
-20
0.57
0.36
-55 to 150
A
-1.7
0.63
0.4
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
160
180
130
Max
200
220
160
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
