AO8403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
Standard Product AO8403 is Pb-free (meets
ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are
electrically identical.
Features
V
DS
(V) = -20V
I
D
= -4 A (V
GS
= -4.5V)
R
DS(ON)
< 42mΩ (V
GS
= -4.5V)
R
DS(ON)
< 52mΩ (V
GS
= -2.5V)
R
DS(ON)
< 70mΩ (V
GS
= -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
