AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
Features
V
DS
(V) = -12V
I
D
= -7 A (V
GS
= -4.5V)
R
DS(ON)
< 18mΩ (V
GS
= -4.5V)
R
DS(ON)
< 22mΩ (V
GS
= -2.5V)
R
DS(ON)
< 29mΩ (V
GS
= -1.8V)
ESD Rating: 4KV HBM
D1
TSSOP-8
Top View
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
G1
S1
G2
D2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-12
±8
-7
-5.8
-20
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
73
96
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
