March 2003
AO8804
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8804 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Features
V
DS
(V) = 20V
I
D
= 8A
R
DS(ON)
< 13mΩ (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 4.5V)
R
DS(ON)
< 19mΩ (V
GS
= 2.5V)
R
DS(ON)
< 27mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±12
8
6.3
30
1.5
1.08
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
