Jan 2003
AO9926A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V
to 8V. The two devices may be used individually, in
parallel or to form a bidirectional blocking switch.
Features
V
DS
(V) = 20V
I
D
= 7A
R
DS(ON)
< 26mΩ (V
GS
= 4.5V)
R
DS(ON)
< 33mΩ (V
GS
= 2.5V)
R
DS(ON)
< 42mΩ (V
GS
= 1.8V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
20
±8
7
6
40
2
1.44
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
