AO9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926B uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is suitable
for use as a uni-directional or bi-directional load
switch.
Standard Product AO9926B is Pb-free (meets
ROHS & Sony 259 specifications). AO9926BL is a
Green Product ordering option. AO9926B and
AO9926BL are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 7.6 A (V
GS
= 10V)
R
DS(ON)
< 23mΩ (V
GS
= 10V)
R
DS(ON)
< 26mΩ (V
GS
= 4.5V)
R
DS(ON)
< 34mΩ (V
GS
= 2.5V)
R
DS(ON)
< 52mΩ (V
GS
= 1.8V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D1
D2
SOIC-8
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
20
±12
7.6
6.1
30
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
