AOB405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2PAK package, this device is well suited for
high current load applications.
Standard Product
AOB405 is Pb-free (meets ROHS & Sony 259
specifications). AOB405L is a Green Product ordering
option. AOB405 and AOB405L are electrically
identical.
Features
V
DS
(V) = -40V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 48mΩ (V
GS
= -10V)
R
DS(ON)
< 72mΩ (V
GS
= -4.5V)
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
-40
±20
-12
-12
-30
-12
30
50
25
2.3
1.5
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
11
45
2.5
Max
16
54
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
