AOB430Y
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB430Y uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
Standard product AOB430Y is
Pb free, inside and out. It uses Pb-free dia attach
and plating material(meets ROHS & Sony 259
specifications). AOB430YL is a Green Product
ordering option. AOB430Y and AOB430YL are
electrically identical.
TO-263
D2-PAK
Features
V
DS
(V) = 60V
I
D
= 12A (Vgs=10V)
R
DS(ON)
< 63 mΩ (V
GS
=10V)
R
DS(ON)
< 85 mΩ (V
GS
= 6V)
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
G
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
60
±20
12
12
30
12
23
50
25
2
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
11.2
50
2.5
Max
13.5
60
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
