AOB438
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB438 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOB438 is Pb-free (meets ROHS & Sony
259 specifications). AOB438L is a Green Product
ordering option. AOB438 and AOB438L are
electrically identical.
TO-263
D2-PAK
Features
1.4
V
DS
(V) = 25V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
< 6.7 mΩ (V
GS
= 10V)
R
DS(ON)
<
10
mΩ (V
GS
= 4.5V)
193
18
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
25
±20
50
50
150
30
135
50
25
3
2.1
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
2.1
Max
20
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
