AOD1N60 / AOU1N60
1.3A, 600V N-Channel MOSFET
formerly engineering part number AOD9600
General Description
The AOD1N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
TO-252
D-PAK
Top View
Bottom View
D
TO-251
Top View
Features
V
DS
(V) = 600V
I
D
= 1.3A
R
DS(ON)
< 9Ω (V
GS
= 10V)
100% UIS Tested!
100% R
g
Tested!
C
iss
, C
oss
, C
rss
Tested!
Bottom View
D
D
G
S
S
G
G
D
S
S
D
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximium
600
±30
1.3
0.8
4.0
1.0
15
30
5
45
0.36
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
2.3
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Case-to-Sink
Maximum Junction-to-Case
D,F
A
A,G
Maximum
55
0.5
2.8
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
