AOD406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD406 uses advanced trench technology to provide
excellent R
DS(ON)
, shoot-through immunity and body diode
characteristics. This device is ideally suited for use as a low
side switch in CPU core power conversion.
Standard
Product AOD406 is Pb-free (meets ROHS & Sony 259
specifications). AOD406L is a Green Product ordering
option. AOD406 and AOD406L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 5.0mΩ (V
GS
= 10V)
R
DS(ON)
< 5.7mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±12
85
75
200
30
140
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
14.2
40
0.56
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
