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AOD407L 参数 Datasheet PDF下载

AOD407L图片预览
型号: AOD407L
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 130 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOD407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
-I
D
(A)
-I
D
(A)
-4.5V
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
220
Normalized On-Resistance
200
180
R
DS(ON)
(mΩ)
160
140
120
100
80
0
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
5
10
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=-10V
V
GS
=-4.5V
2
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
I
D
=-8A
V
GS
=-10V
I
D
=-12A
-3.5V
-3V
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
2
V
GS
=-4V
6
125°C
4
25°C
-7V
-10V
10
-6V
-5V
8
V
DS
=-5V
300
I
D
=-12A
250
125°C
R
DS(ON)
(mΩ)
-I
S
(A)
200
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
150
100
25°C
25°C
50
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.