AOD409
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD409 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Features
V
DS
(V) = -60V
I
D
= -26A (V
GS
= -10V)
R
DS(ON)
< 40mΩ (V
GS
= -10V) @ -20A
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-60
±20
-26
-18
-60
-26
134
60
30
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
1.9
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.