AOD4102
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=24V, VGS=0V
30
V
1
5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
VDS=VGS, ID=250µA
GS=10V, VDS=5V
VGS=10V, ID=12A
10
3
VGS(th)
ID(ON)
1
1.8
V
A
V
30
30
46
37
64
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
DS=5V, ID=10A
53
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
12
S
V
A
IS=1A, VGS=0V
0.77
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
360
45
30
1
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.6
3.2
1.5
2.2
4.3
10
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
ns
tD(off)
tf
12.8
3.2
14
ns
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
6
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
