AOD4106
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4106 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device is
suitable for use as a low side switch in SMPS and
general purpose applications.
Standard Product
AOD4106 is Pb-free (meets ROHS & Sony 259
specifications). AOD4106L is a Green Product ordering
option. AOD4106 and AOD4106L are electrically
identical.
Features
V
DS
(V) = 25V
I
D
= 50A (V
GS
= 20V)
R
DS(ON)
< 5mΩ (V
GS
= 20V)
R
DS(ON)
< 6.5mΩ (V
GS
= 12V)
R
DS(ON)
< 8.1mΩ (V
GS
= 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
25
±30
50
50
180
30
135
75
38
6.25
4
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
A,D
Maximum Junction-to-Ambient
B
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
1.5
Max
20
50
2.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
