SRFET
AOD4112
N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFETTM The AOD4112 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications.
Standard Product AOD4112 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 20A (V
GS
= 10V)
R
DS(ON)
< 9.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested!
TO-252
D-PAK
Top View
Drain Connected to
G
Tab
S
G
D
S
D
Soft Recovery
MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
GF
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±20
20
20
80
25
94
50
25
5.7
3.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
44
2.4
Max
22
55
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com