AOD4100
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4100 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a High side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = 25V
I
D
= 50A (V
GS
= 10V)
R
DS(ON)
< 6.5mΩ (V
GS
= 20V)
R
DS(ON)
< 9mΩ (V
GS
= 12V)
R
DS(ON)
< 12mΩ (V
GS
= 10V)
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
S
G
S
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
C
Avalanche Current
C
C
Maximum
25
±30
50
49
120
28
118
50
25
6.5
4.2
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
Max
19
52
3
Units
°C/W
°C/W
°C/W
V
GS
T
C
=25°C
G
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
Power Dissipation
A
Junction and Storage Temperature Range
T
J
, T
STG
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
D
Steady-State
Maximum Junction-to-Case
Symbol
R
θJA
R
θJC
Typ
16
43
2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
