AOD4128
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in
CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Standard Product AOD412
8 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V
DS
(V) = 25V
(V
GS
= 10V)
I
D
= 60 A
R
DS(ON)
< 4 mΩ (V
GS
= 10V)
R
DS(ON)
< 7 mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
25
±20
60
60
165
45
304
75
37
2.0
1.3
-55 to 175
Units
V
V
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJC
Typ
18
50
1
Max
25
60
2
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
