AOD4136
TM
N-Channel SDMOS POWER Transistor
General Description
The AOD4136 is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for both DC-DC and load
switch applications.
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Features
V
DS
(V) = 25V
I
D
= 25A
(V
GS
= 10V)
R
DS(ON)
< 11mΩ (V
GS
= 10V)
R
DS(ON)
<19mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B,H
Current
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
Maximum
25
±20
25
20
100
17
15
30
15
2.1
1.3
-55 to 175
Units
V
V
V
GS
C
T
C
=25°
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
mJ
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
W
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
A,G
Maximum Junction-to-Ambient
Maximum Junction-to-Case
F
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.4
50
4
Max
25
60
5
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
